Probing Charge Dynamics in Diamond with an Individual Color Center

نویسندگان

چکیده

Control over the charge states of color centers in solids is necessary to fully utilize them quantum technologies. However, microscopic dynamics deep defects wide-band-gap semiconductors are complex, and much remains unknown. We a single-shot charge-state readout an individual nitrogen-vacancy (NV) center probe surrounding diamond. show that NV state can be converted through capture holes produced by optical illumination many micrometers away. With this method, we study conversion silicon-vacancy (SiV) provide evidence dark SiV under SiV2–. These measurements illustrate carrier generation, transport, important considerations design implementation devices with novel way control

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ژورنال

عنوان ژورنال: Nano Letters

سال: 2021

ISSN: ['1530-6992', '1530-6984']

DOI: https://doi.org/10.1021/acs.nanolett.1c02250